Manufacturer Part Number
STF20NK50Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with low on-resistance and high breakdown voltage.
Product Features and Performance
N-Channel MOSFET
Drain-Source Voltage (Vdss) of 500V
Low on-resistance (Rds(on)) of 270mΩ @ 8.5A, 10V
Continuous Drain Current (Id) of 17A at 25°C
Input Capacitance (Ciss) of 2600pF @ 25V
Power Dissipation (Ptot) of 40W at Tc
Gate-Source Voltage (Vgs) range of ±30V
Threshold Voltage (Vgs(th)) of 4.5V @ 100A
Gate Charge (Qg) of 119nC @ 10V
Product Advantages
High breakdown voltage for improved circuit protection
Low on-resistance for efficient power conversion
High current handling capability
Suitable for a wide range of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
On-Resistance (Rds(on)): 270mΩ @ 8.5A, 10V
Continuous Drain Current (Id): 17A at 25°C
Input Capacitance (Ciss): 2600pF @ 25V
Power Dissipation (Ptot): 40W at Tc
Gate-Source Voltage (Vgs): ±30V
Threshold Voltage (Vgs(th)): 4.5V @ 100A
Gate Charge (Qg): 119nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable thermal performance
Compatibility
Suitable for a wide range of power management applications, including switch-mode power supplies, motor drives, and power inverters.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Power inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and widely available.
No plans for discontinuation in the near future.
Ongoing development of newer, more efficient MOSFET technologies as potential upgrades.
Several Key Reasons to Choose This Product
High breakdown voltage (500V) for improved circuit protection
Low on-resistance (270mΩ) for efficient power conversion
High current handling capability (17A) for versatile applications
Wide operating temperature range (-55°C to 150°C)
RoHS3 compliance for environmental responsibility
Reliable TO-220FP package for thermal management