Manufacturer Part Number
STF14NM65N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V drain-source voltage
Low on-resistance of 380 milliohms
12A continuous drain current at 25°C
Power dissipation of 30W at case temperature
Gate-source voltage up to ±25V
Fast switching capability
Robust avalanche energy rating
Product Advantages
Improved energy efficiency
Reliable and rugged design
Suitable for high-voltage and high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 380 milliohms
Drain Current (Id): 12A
Power Dissipation (Pd): 30W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial equipment
Welding machines
Product Lifecycle
Current product, no signs of discontinuation
Replacement or upgrade options may be available from STMicroelectronics
Key Reasons to Choose This Product
High voltage capability up to 650V
Low on-resistance for improved efficiency
Robust design for reliable operation
Suitable for high-power, high-temperature applications
RoHS3 compliance for environmental responsibility
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