Manufacturer Part Number
STD8NM50N
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
500V Drain to Source Voltage
5A Continuous Drain Current at 25°C
790mΩ Maximum On-Resistance at 2.5A, 10V
364pF Maximum Input Capacitance at 50V
45W Maximum Power Dissipation at Tc
4V Maximum Gate Threshold Voltage at 250A
14nC Maximum Gate Charge at 10V
Product Advantages
High Voltage Capability
Low On-Resistance
Surface Mount Packaging
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
150°C Maximum Junction Temperature
±25V Maximum Gate-Source Voltage
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact surface mount package
Proven reliability and quality from STMicroelectronics