Manufacturer Part Number
STD8N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
600V breakdown voltage
8A continuous drain current
600mΩ on-resistance
85W power dissipation
Low input and reverse transfer capacitance
Fast switching capability
Product Advantages
Robust and reliable design
Efficient power conversion
Compact and space-saving package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 600mΩ
Drain Current (Id): 8A
Input Capacitance (Ciss): 375pF
Power Dissipation (Ptot): 85W
Quality and Safety Features
RoHS3 compliant
DPAK package for improved thermal performance
Designed for high reliability and long lifespan
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not near discontinuation
Replacement or upgrade options are available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low power loss
Compact and thermally efficient package
Robust and reliable design for demanding applications
Excellent switching performance and low gate charge
Wide voltage and current capabilities
STD8N10LSTMicroelectronics