Manufacturer Part Number
STD5NM60T4
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel MOSFET in a DPAK package
Product Features and Performance
600V drain-source voltage
5A continuous drain current
1Ohm maximum on-resistance
400pF maximum input capacitance
96W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Robust and reliable design
Low on-resistance for high efficiency
Compact DPAK package for space-saving applications
Suitable for high-voltage, high-power switching applications
Key Technical Parameters
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-resistance: 1Ohm max
Drain current: 5A continuous
Input capacitance: 400pF max
Power dissipation: 96W max
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable performance
DPAK package for robust design
Compatibility
Suitable for high-voltage, high-power switching applications
Compatible with various electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Inductive load switching
Industrial automation and control
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose
Robust and reliable design
High efficiency due to low on-resistance
Compact DPAK package for space-saving
Suitable for high-voltage, high-power switching applications
Wide operating temperature range
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