Manufacturer Part Number
STD5NM50T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
500V drain-source voltage rating
800mΩ maximum on-resistance at 2.5A, 10V
5A maximum continuous drain current at 25°C
100W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
Efficient power conversion
Compact DPAK package
Suitable for high-voltage, high-current applications
Key Technical Parameters
Vds: 500V
Vgs(max): ±30V
Rds(on): 800mΩ @ 2.5A, 10V
Id(max): 7.5A @ 25°C
Pd(max): 100W
Ciss: 415pF @ 25V
Quality and Safety Features
RoHS3 compliant
MOSFET technology for reliable performance
Compatibility
Compatible with various high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact DPAK package for space-constrained designs
Wide operating temperature range
Reliable MOSFET technology
RoHS3 compliance for environmental responsibility
STD5NM50-1VBSEMI