Manufacturer Part Number
STD3N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with extended voltage capability
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 800V
On-Resistance (Rds(on)) of 3.5Ω @ 1A, 10V
Continuous Drain Current (Id) of 2.5A @ 25°C
Wide Operating Temperature Range of -55°C to 150°C
Low Input Capacitance (Ciss) of 130pF @ 100V
Maximum Power Dissipation of 60W @ 25°C
Product Advantages
Excellent voltage handling capability
Low on-resistance for efficient power conversion
Wide temperature range for robust operation
Low input capacitance for fast switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.5Ω @ 1A, 10V
Continuous Drain Current (Id): 2.5A @ 25°C
Input Capacitance (Ciss): 130pF @ 100V
Power Dissipation (Max): 60W @ 25°C
Quality and Safety Features
RoHS3 compliant
DPAK package for surface mount
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available, check with manufacturer
Several Key Reasons to Choose This Product
Exceptional voltage handling up to 800V
Low on-resistance for efficient power conversion
Wide operating temperature range for robust performance
Fast switching capability due to low input capacitance
RoHS3 compliance for environmental responsibility
Surface mount DPAK package for easy integration
STD3NC50-TRSTMicroelectronics