Manufacturer Part Number
STD3LN62K3
Manufacturer
STMicroelectronics
Introduction
High-performance silicon N-channel MOSFET transistor
Product Features and Performance
Optimized for high-frequency switching applications
Robust and reliable design
Low on-resistance for high efficiency
Fast switching speed
Product Advantages
Excellent thermal performance
Compact DPAK package
Suitable for high-voltage applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 620V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50A
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable DPAK package
Compatibility
Suitable for a wide range of high-voltage, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Reliable and robust DPAK package
RoHS3 compliance for environmental safety