STD18N65M5 - STMicroelectronics

Manufacturer Part Number

STD18N65M5

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET transistor

Part of the MDmesh V series

Product Features and Performance

Very low on-resistance of 220 mΩ @ 7.5 A, 10 V

High drain-to-source voltage rating of 650 V

Excellent gate charge of 31 nC @ 10 V

Wide operating temperature range up to 150°C

Product Advantages

Efficient power conversion with low conduction losses

High voltage capability for demanding applications

Compact DPAK surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650 V

Gate-to-Source Voltage (Vgs): ±25 V

Continuous Drain Current (Id): 15 A @ 25°C

On-Resistance (Rds(on)): 220 mΩ @ 7.5 A, 10 V

Input Capacitance (Ciss): 1240 pF @ 100 V

Power Dissipation: 110 W @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with various power electronics circuits and systems

Application Areas

Switch-mode power supplies

Motor drives

Renewable energy systems

Industrial and consumer electronics

Product Lifecycle

Currently in production

Replacements and upgrades available as technology advances

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Robust and reliable design for demanding applications

Compact surface mount package for space-constrained designs

Long-term availability and support from STMicroelectronics