Manufacturer Part Number
STD18N55M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for high-voltage, high-power switching applications
Product Features and Performance
550V drain-to-source voltage capability
Ultra-low on-resistance of 192mΩ
Continuous drain current of 16A at 25°C
Wide operating temperature range up to 150°C
Excellent switching performance
Product Advantages
Reduced conduction losses
High efficiency
Compact design
Reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 550V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 192mΩ @ 8A, 10V
Continuous drain current (Id): 16A @ 25°C
Input capacitance (Ciss): 1260pF @ 100V
Power dissipation (Pd): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust DPAK package
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Induction heating
Welding equipment
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent efficiency and performance
Compact and reliable design
Wide operating temperature range
Robust and RoHS3 compliant