Manufacturer Part Number
STD16N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
650V drain-to-source voltage
360 mΩ maximum on-resistance at 5.5A, 10V
11A maximum continuous drain current at 25°C
Operating temperature range of -55°C to 150°C
Low input capacitance of 718 pF at 100V
Maximum power dissipation of 110W at 25°C
Product Advantages
Excellent power efficiency
High voltage and current handling capability
Compact DPAK surface mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 360 mΩ @ 5.5A, 10V
Drain Current (Id): 11A (Tc)
Input Capacitance (Ciss): 718 pF @ 100V
Power Dissipation (Ptot): 110W (Tc)
Quality and Safety Features
RoHS3 compliant
DPAK surface mount package
Compatibility
Surface mount applications
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Telecommunications equipment
Product Lifecycle
Current production
No planned discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent power efficiency and low on-resistance
Compact surface mount DPAK package
Suitable for high-frequency switching applications
Availability of replacement and upgrade options
STD165GK14BSIRECTIFIERIGBT Module