Manufacturer Part Number
STD16N60M2
Manufacturer
STMicroelectronics
Introduction
The STD16N60M2 is a high-performance N-channel MOSFET transistor designed for a wide range of power conversion and control applications.
Product Features and Performance
600V drain-to-source voltage rating
320mΩ maximum on-resistance at 6A, 10V
12A continuous drain current at 25°C case temperature
700pF maximum input capacitance at 100V
110W maximum power dissipation at 25°C case temperature
Fast switching with low gate charge of 19nC at 10V
Product Advantages
High efficiency due to low on-resistance
Robust design with high voltage and current ratings
Compact DPAK surface-mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 320mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 700pF @ 100V
Power Dissipation (Pd): 110W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
The STD16N60M2 is compatible with a wide range of power supply, motor control, and other industrial and consumer electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Appliances
Industrial automation
Product Lifecycle
The STD16N60M2 is an active product, with no plans for discontinuation. Replacement or upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent efficiency and performance due to low on-resistance
Robust design with high voltage and current ratings
Compact and easy-to-use DPAK package
Suitable for high-frequency switching applications
Manufactured to high quality and safety standards
Backed by STMicroelectronics' technical support and product lifecycle management
STD16NE06LT4VBSEMI