Manufacturer Part Number
STB9NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor in D2PAK package
Product Features and Performance
600V drain-source voltage
950mΩ maximum on-resistance at 3.5A, 10V
7A continuous drain current at 25°C case temperature
-55°C to 150°C operating temperature range
Low input capacitance of 1110pF at 25V
Maximum power dissipation of 125W at 25°C case temperature
Product Advantages
Improved efficiency and performance in power conversion applications
Compact D2PAK surface mount package
Excellent thermal management
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 950mΩ @ 3.5A, 10V
Continuous drain current (Id): 7A @ 25°C
Input capacitance (Ciss): 1110pF @ 25V
Power dissipation (Ptot): 125W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Compatible with various power conversion and control circuits
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
High efficiency and performance in power conversion
Compact surface mount package
Excellent thermal management
Proven reliability and quality