Manufacturer Part Number
STB9NK50ZT4
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor
Part of the SuperMESH series
Product Features and Performance
Drain to Source Voltage (Vdss) of 500V
Continuous Drain Current (Id) of 7.2A at 25°C
On-Resistance (Rds(on)) of 850mΩ at 3.6A and 10V
Input Capacitance (Ciss) of 910pF at 25V
Power Dissipation (Ptot) of 110W at Tc (case temperature)
Wide Operating Temperature Range of -55°C to 150°C (TJ)
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact D2PAK surface mount package
Key Technical Parameters
N-Channel MOSFET Technology
Vgs (Max) of ±30V
Vgs(th) (Max) of 4.5V at 100A
Gate Charge (Qg) of 32nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a variety of power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available from STMicroelectronics
Key Reasons to Choose
Excellent power handling and efficiency
Compact and thermally efficient package
Reliable performance in high-temperature environments
Compatibility with a wide range of power electronics applications