Manufacturer Part Number
STB80N4F6AG
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET for automotive and industrial applications
Product Features and Performance
Rugged power MOSFET with low on-resistance
Excellent thermal and electrical characteristics
Designed for high-current, high-frequency switching applications
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Excellent thermal performance
Suitable for harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 6 mΩ @ 40 A, 10 V
Continuous Drain Current (Id): 80 A @ 25°C
Input Capacitance (Ciss): 2150 pF @ 25 V
Power Dissipation (Pd): 70 W @ Tc
Gate Charge (Qg): 36 nC @ 10 V
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
High-power motor drives
Switching power supplies
Industrial automation equipment
Electric and hybrid electric vehicles
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust design for harsh environments
Automotive and industrial grade quality
Wide range of applications