Manufacturer Part Number
STB80N20M5
Manufacturer
STMicroelectronics
Introduction
The STB80N20M5 is a high-performance N-channel power MOSFET transistor from STMicroelectronics' MDmesh V series.
Product Features and Performance
200V drain-source voltage rating
23mΩ maximum on-resistance at 30.5A, 10V
61A continuous drain current at 25°C
190W maximum power dissipation
4329pF maximum input capacitance at 50V
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Optimized for fast switching
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 23mΩ @ 30.5A, 10V
Drain Current (Id): 61A @ 25°C
Power Dissipation (Pd): 190W @ 25°C
Input Capacitance (Ciss): 4329pF @ 50V
Quality and Safety Features
ROHS3 compliant
Industrial-grade reliability and quality
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with a wide range of power supply and motor control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Home appliances
Renewable energy systems
Product Lifecycle
The STB80N20M5 is an actively supported product in the STMicroelectronics portfolio.
Replacements or upgrades may be available as technology advances.
Key Reasons to Choose
Excellent efficiency and power density due to low on-resistance
High current capability for demanding applications
Fast switching performance for high-frequency operation
Robust design for reliable operation in harsh environments
Compatibility with a wide range of power electronics applications
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