Manufacturer Part Number
STB6NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in a TO-263 package
Product Features and Performance
600V Drain-to-Source Voltage
6A Continuous Drain Current
2Ω On-Resistance
Low Gate Charge
Wide Operating Temperature Range (-55°C to 150°C)
Suitable for Switched-Mode Power Supplies, Motor Drives, and Lighting Applications
Product Advantages
High Voltage Capability
Low On-Resistance
Compact TO-263 Package
Efficient Power Conversion
Reliable Operation in Harsh Environments
Key Technical Parameters
Vdss: 600V
Vgs(max): ±30V
Rds(on) @ Id, Vgs: 1.2Ω @ 3A, 10V
Id @ 25°C: 6A (Tc)
Ciss: 905pF @ 25V
Pd(max): 110W (Tc)
Quality and Safety Features
RoHS Compliant
D2PAK Packaging for Improved Thermal Performance
Designed and Manufactured to High Quality Standards
Compatibility
Suitable for use in a wide range of power electronics applications, including:
Switched-Mode Power Supplies (SMPS)
Motor Drives
Lighting Applications
Application Areas
Industrial Equipment
Consumer Electronics
Renewable Energy Systems
Automotive Electronics
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacements and upgrades may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
High Voltage Capability: The 600V Drain-to-Source Voltage allows for use in high-voltage applications.
Low On-Resistance: The 1.2Ω on-resistance enables efficient power conversion and low power losses.
Compact Packaging: The TO-263 package provides a space-efficient solution for power electronics designs.
Wide Temperature Range: The -55°C to 150°C operating temperature range ensures reliable performance in harsh environments.
Proven Reliability: The product is designed and manufactured to high quality standards, ensuring long-term reliability.