Manufacturer Part Number
STB6NK60Z-1
Manufacturer
STMicroelectronics
Introduction
N-Channel MOSFET transistor with 600V breakdown voltage and 6A continuous drain current rating.
Product Features and Performance
600V drain-to-source voltage rating
6A continuous drain current at 25°C
2Ω maximum on-resistance at 3A, 10V
Low gate charge of 46nC at 10V
Operating temperature range of -55°C to 150°C
Low input capacitance of 905pF at 25V
110W maximum power dissipation
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact through-hole I2PAK package
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.2Ω @ 3A, 10V
Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 905pF @ 25V
Power Dissipation (Ptot): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with high-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial controls
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available from STMicroelectronics.
Key Reasons to Choose This Product
Exceptional voltage and current handling capability
Low on-resistance for improved efficiency
Compact and reliable through-hole package
Suitable for a wide range of high-voltage, high-current applications
Backed by the quality and reliability of STMicroelectronics
STB6NK90ZT4 MOSSTMicroelectronics