Manufacturer Part Number
SCT30N120
Manufacturer
STMicroelectronics
Introduction
Silicon Carbide (SiC) Field-Effect Transistor (FET)
Designed for high-power, high-efficiency power conversion applications
Product Features and Performance
High blocking voltage of 1200V
Low on-resistance of 100mΩ
High continuous drain current of 40A
Wide operating temperature range of -55°C to 200°C
Fast switching with low gate charge of 105nC
Product Advantages
Improved energy efficiency compared to traditional silicon-based devices
Reduced power losses and heat generation
Allows for more compact and lighter power conversion systems
Excellent thermal management capabilities
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): +25V/-10V
On-Resistance (Rds(on)): 100mΩ
Continuous Drain Current (Id): 40A
Input Capacitance (Ciss): 1700pF
Power Dissipation (Pd): 270W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power, high-efficiency power conversion applications
Application Areas
Switching power supplies
Motor drives
Renewable energy inverters
Electric vehicle chargers
Industrial automation and control systems
Product Lifecycle
The SCT30N120 is an active and current product from STMicroelectronics.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance and efficiency characteristics
Robust and reliable silicon carbide technology
Wide operating temperature range for demanding applications
Compact and lightweight design for space-constrained systems
Proven quality and safety standards from a reputable manufacturer
SCT500DSEMITEL