Manufacturer Part Number
SCT50N120
Manufacturer
STMicroelectronics
Introduction
High-performance silicon carbide (SiC) MOSFET power transistor
Product Features and Performance
Operates at high voltages up to 1200V
Handles high currents up to 65A
Low on-state resistance of 69mΩ
Fast switching speed
Wide operating temperature range of -55°C to 200°C
Product Advantages
Improved energy efficiency
Reduced power losses
Compact design
Reliable and durable
Key Technical Parameters
Drain to Source Voltage (Vdss): 1200V
Gate Voltage (Vgs): +25V/-10V
On-state Resistance (Rds(on)): 69mΩ
Continuous Drain Current (Id): 65A
Input Capacitance (Ciss): 1900pF
Power Dissipation (Tc): 318W
Quality and Safety Features
RoHS3 compliant
HiP247 package for reliable performance
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Solar inverters
Electric vehicles
Industrial automation
Product Lifecycle
This product is currently available and is not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
High voltage and current handling capabilities
Fast switching speed for improved system performance
Wide operating temperature range for reliability in harsh environments
Compact and reliable package design
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