Manufacturer Part Number
MD1803DFX
Manufacturer
STMicroelectronics
Introduction
High-power NPN bipolar junction transistor (BJT)
Designed for high-voltage, high-current applications
Product Features and Performance
Capable of handling up to 700V collector-emitter voltage
Supports up to 10A of collector current
Able to withstand a maximum collector cutoff current of 200A
Low saturation voltage of 2V @ 1.25A, 5A
Wide operating temperature range up to 150°C
Product Advantages
Robust and reliable design for high-power applications
Excellent voltage and current handling capabilities
Efficient power dissipation and low thermal resistance
Key Technical Parameters
Power Rating: 57W
Collector-Emitter Breakdown Voltage: 700V
Collector Current (Max): 10A
Collector Cutoff Current (Max): 200A
DC Current Gain (hFE): 5.5 @ 5A, 5V
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
Can be used in a variety of high-power electronic circuits and applications
Application Areas
Power supplies
Motor drives
Industrial control systems
Welding equipment
Switched-mode power supplies
Product Lifecycle
This product is an active and widely available part
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Exceptional voltage and current handling capability
Reliable and robust design for high-power applications
Efficient thermal performance and low saturation voltage
Wide operating temperature range
RoHS3 compliance for environmental responsibility
MD1810K6-GMicrochip