Manufacturer Part Number
MD1802FX
Manufacturer
STMicroelectronics
Introduction
The MD1802FX is a high-power NPN bipolar junction transistor (BJT) from STMicroelectronics, designed for use in a variety of industrial and power electronics applications.
Product Features and Performance
High collector-emitter breakdown voltage of 700V
High collector current rating of 10A
High collector current cutoff of 200A
Low collector-emitter saturation voltage of 1.5V at 5A collector current
Wide operating temperature range up to 150°C
Product Advantages
Excellent power handling capabilities
Robust and reliable design
Suitable for high-voltage and high-current applications
Compact ISOWATT-218FX package
Key Technical Parameters
Manufacturer Part Number: MD1802FX
Package: ISOWATT-218FX
Transistor Type: NPN
Collector-Emitter Breakdown Voltage (Max): 700V
Collector Current (Max): 10A
Collector Current Cutoff (Max): 200A
Collector-Emitter Saturation Voltage (Max): 1.5V @ 5A
DC Current Gain (Min): 5.5 @ 5A, 5V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Housed in a reliable and thermally-efficient ISOWATT-218FX package
Compatibility
The MD1802FX is a direct replacement for various high-power NPN transistors in industrial and power electronics applications.
Application Areas
Power supplies
Motor drives
Induction heating
Welding equipment
Industrial control systems
Product Lifecycle
The MD1802FX is an active and widely available product from STMicroelectronics. There are no immediate plans for discontinuation, and suitable replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Exceptional power handling capabilities with a high collector-emitter breakdown voltage and collector current rating
Robust and reliable design, suitable for demanding industrial and power electronics applications
Compact and thermally-efficient ISOWATT-218FX package
Wide operating temperature range up to 150°C
RoHS3 compliance for environmental sustainability
Direct replacement for various high-power NPN transistors, ensuring compatibility and ease of use