Manufacturer Part Number
L6569AD013TR
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current gate driver IC for IGBT and N-channel MOSFET power switches.
Product Features and Performance
Operates with supply voltages from 10V to 16.6V
Supports RC input circuit
Synchronous half-bridge configuration with 2 drivers
Capable of driving IGBT and N-channel MOSFET power switches
Peak output current of 170mA (source) and 270mA (sink)
High-side voltage up to 600V (bootstrap)
Operating temperature range of -40°C to 150°C
Product Advantages
Robust and reliable gate driver for high-power applications
Flexible input and output configurations
High-current capability to drive large power devices
Wide operating temperature range
Key Technical Parameters
Supply voltage: 10V ~ 16.6V
Number of drivers: 2
Driven configuration: Half-bridge
Gate type: IGBT, N-Channel MOSFET
Peak output current: 170mA (source), 270mA (sink)
High-side voltage (max): 600V
Quality and Safety Features
RoHS3 compliant
8-SOIC package for surface mount
Compatibility
Suitable for driving IGBT and N-channel MOSFET power switches
Application Areas
Switching power supplies
Motor drives
Induction heating
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently available and there are no indications of it being discontinued. Replacement or upgraded products may become available in the future.
Key Reasons to Choose This Product
Robust and reliable gate driver for high-power applications
Flexible input and output configurations to accommodate various power switch types
High-current capability to efficiently drive large power devices
Wide operating temperature range for use in demanding environments
RoHS3 compliance for environmental considerations