Manufacturer Part Number
L6571AD013TR
Manufacturer
stmicroelectronics
Introduction
The L6571AD013TR from stmicroelectronics is a gate driver specifically designed for power management applications, suitable for driving IGBT and N-Channel MOSFET in a half-bridge configuration.
Product Features and Performance
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type Compatibility: IGBT, N-Channel MOSFET
Voltage Supply Range: 10V ~ 16.6V
Current Peak Output (Source, Sink): 170mA, 270mA
Input Type: RC Input Circuit
High Side Voltage Max (Bootstrap): 600 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Product Advantages
Specifically tailored for IGBT and N-Channel MOSFET driving
Capable of handling high side voltage up to 600V
Wide supply voltage range for versatile use
Sustains high operating temperatures, making it suitable for harsh environments
Key Technical Parameters
Supply Voltage: 10V ~ 16.6V
Output Current (Source): 170mA
Output Current (Sink): 270mA
Maximum High Side Voltage (Bootstrap): 600V
Operating Temperature Range: -40°C ~ 150°C
Quality and Safety Features
Robust operation in varying temperature conditions (-40°C ~ 150°C)
Compatibility
Compatible with IGBT and N-Channel MOSFET gate types
Application Areas
Industrial motor drives
Inverters
Switching power supplies
Product Lifecycle
Status: Obsolete
Note: Check for potential replacement options or upgrade paths as this product is nearing discontinuation.
Several Key Reasons to Choose This Product
Dual driver capability allowing efficient half-bridge control
Support for both synchronous channel type and a wide range of gate types
High reliability in extreme temperature conditions
High voltage handling up to 600V suitable for a variety of power applications
Obsolescence status prompts consideration for streamlined future upgrades or replacements