Manufacturer Part Number
BULD742CT4
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
DPAK Package
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Tape & Reel (TR) Packaging
Operating Temperature: 150°C (TJ)
Power Rating: 45 W
Collector-Emitter Breakdown Voltage: 400 V
Collector Current (Max): 4 A
Collector Cutoff Current (Max): 250 A
Collector-Emitter Saturation Voltage: 1.5 V @ 1 A, 3.5 A
Transistor Type: NPN
DC Current Gain (hFE): 25 @ 800 mA, 3 V
Surface Mount Mounting
Product Advantages
High power handling capability
High voltage rating
Compact DPAK package
Key Technical Parameters
Power Rating: 45 W
Collector-Emitter Breakdown Voltage: 400 V
Collector Current (Max): 4 A
Collector Cutoff Current (Max): 250 A
Collector-Emitter Saturation Voltage: 1.5 V @ 1 A, 3.5 A
DC Current Gain (hFE): 25 @ 800 mA, 3 V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of electronic circuits and applications
Application Areas
Suitable for power amplifier, switching, and control circuits
Product Lifecycle
The BULD742CT4 is an active and available product from STMicroelectronics.
Several Key Reasons to Choose This Product
High power handling capability up to 45 W
High voltage rating up to 400 V
Compact DPAK package
Suitable for a variety of power electronics applications