BULD118D-1 - STMicroelectronics

Manufacturer Part Number

BULD118D-1

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Power Rating: 20 W

Collector-Emitter Breakdown Voltage: 400 V

Collector Current (Max): 2 A

Collector Cutoff Current (Max): 250 A

Collector-Emitter Saturation Voltage: 1.5 V @ 400 mA, 2 A

DC Current Gain (hFE): 10 @ 500 mA, 5 V

Operating Temperature: 150°C (TJ)

Product Advantages

High power handling capability

High voltage and current ratings

Low saturation voltage

Key Technical Parameters

Transistor Type: NPN

Mounting Type: Through Hole

Package: TO-251-3 Short Leads, IPak, TO-251AA

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with TO-251 (IPAK) package

Application Areas

Suitable for high-power switching and amplification applications

Product Lifecycle

Current product, no information on discontinuation or replacements

Key Reasons to Choose This Product

High power handling capability

High voltage and current ratings

Low saturation voltage

RoHS3 compliance

Compatible with standard TO-251 (IPAK) package