RMLV0816BGSB-4S2#HA0 - Renesas

Manufacturer Part Number

RMLV0816BGSB-4S2#HA0

Manufacturer

Renesas Electronics America

Introduction

The RMLV0816BGSB-4S2#HA0 is a high-performance, low-power 8Mbit SRAM memory device from Renesas Electronics. It features a parallel interface and is designed for a wide range of embedded applications requiring reliable and efficient data storage.

Product Features and Performance

8Mbit SRAM memory capacity

512K x 16 memory organization

Parallel memory interface

45ns write cycle time (word/page mode)

45ns access time

4V to 3.6V operating voltage

Wide operating temperature range of -40°C to 85°C

Product Advantages

High-density SRAM storage for embedded systems

Low power consumption for extended battery life

Reliable and robust performance in harsh environments

Parallel interface for easy integration into existing designs

Key Reasons to Choose This Product

High-performance SRAM with fast access and write speeds

Flexible voltage and temperature range for versatile applications

Space-saving surface mount package for compact designs

Proven reliability and longevity from a trusted semiconductor manufacturer

Quality and Safety Features

Rigorous quality control and testing processes

RoHS-compliant and lead-free design for environmental safety

Comprehensive datasheet and application support from Renesas

Compatibility

The RMLV0816BGSB-4S2#HA0 is compatible with a wide range of embedded systems and microcontrollers with parallel memory interfaces.

Application Areas

Industrial automation and control systems

Automotive electronics

Telecommunications equipment

Medical devices

Consumer electronics

Product Lifecycle

The RMLV0816BGSB-4S2#HA0 is an active, in-production product. Renesas offers equivalent or alternative SRAM models for customers' specific needs. For more information, please contact our website's sales team.