Manufacturer Part Number
RQA0002DNSTB-E
Manufacturer
Renesas Electronics Corporation
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 16V
Vgs (Max) of ±5V
Continuous Drain Current (Id) of 3.8A at 25°C
Input Capacitance (Ciss) of 102pF at 0V
Power Dissipation (Max) of 15W at Tc
Threshold Voltage (Vgs(th)) of 750mV at 1mA
Product Advantages
High current capability
Low on-resistance
Fast switching speed
Compact surface mount package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
3-DFN Exposed Pad Package
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface Mount Mounting Type
Application Areas
General purpose power switching
Motor control
Automotive electronics
Industrial automation
Product Lifecycle
This product is an active part and not nearing discontinuation.
Replacement and upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High current handling capability up to 3.8A
Low on-resistance for efficient power conversion
Compact surface mount package for space-constrained designs
Proven MOSFET technology from a reputable manufacturer