Manufacturer Part Number
BSS7728NH6327
Manufacturer
Infineon Technologies
Introduction
This is a single N-channel MOSFET transistor from Infineon's SIPMOS series, designed for a wide range of applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Vgs (Max) of ±20V
Low on-resistance (Rds On) of 5Ohm @ 500mA, 10V
Continuous Drain Current (Id) of 200mA at 25°C
Input Capacitance (Ciss) of 56 pF @ 25V
Power Dissipation (Max) of 360mW at 25°C
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Compact surface mount package
Robust design for reliable operation
Suitable for a wide range of applications
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Vgs(th) (Max) of 2.3V @ 26A
Drive Voltage (Max Rds On, Min Rds On) of 4.5V, 10V
Gate Charge (Qg) (Max) of 1.5 nC @ 10V
Quality and Safety Features
Compliant with relevant safety and quality standards
Robust design for reliable operation in harsh environments
Compatibility
Suitable for use in a wide range of electronic devices and applications
Application Areas
Power management circuits
Motor control
Switching applications
General-purpose electronics
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
Compact and reliable surface mount package
Wide operating temperature range for versatile applications
Compliance with relevant safety and quality standards
Suitable for a broad range of electronic devices and applications
BSS69RDiodes Incorporated