RJP4009ANS-01#Q6 - Renesas Electronics America Inc

Manufacturer Part Number

RJP4009ANS-01#Q6

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance IGBT transistor for various power electronics applications

Product Features and Performance

Optimized for high-power, high-efficiency power conversion

Fast switching speed and low conduction losses

Wide operating temperature range of -40°C to 150°C

Product Advantages

Reliable and robust design

Excellent thermal management

High power density and efficiency

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 400 V

Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A

Current Collector Pulsed (Icm): 150 A

Power Max: 1.8 W

Quality and Safety Features

RoHS3 compliant

Rigorous quality control and testing

Compatibility

Suitable for a wide range of power electronics applications, including motor drives, power supplies, and inverters

Application Areas

Industrial automation

Renewable energy systems

Electric vehicles

Home appliances

Product Lifecycle

Currently in active production

Replacements and upgrades available

Key Reasons to Choose This Product

Exceptional performance and efficiency

Reliable and durable design

Broad compatibility and application versatility

Compliance with stringent safety and environmental standards