Manufacturer Part Number
RJP4009ANS-01#Q5
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a high-performance IGBT (Insulated Gate Bipolar Transistor) transistor from Renesas Electronics Corporation.
Product Features and Performance
Capable of handling high power and current up to 150A
Designed for high-efficiency and high-speed switching applications
Operates in a wide temperature range of -40°C to 150°C
Low collector-emitter saturation voltage (Vce(on)) of 9V @ 2.5V, 150A
High collector-emitter breakdown voltage of 400V
High pulse current capability of 150A
Product Advantages
Excellent power handling and efficiency
Wide operating temperature range
Robust and reliable performance
Compact 8-VSON (3x4.4) package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 400V
Collector-Emitter Saturation Voltage (Max): 9V @ 2.5V, 150A
Collector Pulsed Current (Max): 150A
Power Dissipation (Max): 1.8W
Operating Temperature Range: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Meets high-quality standards for industrial and automotive applications
Compatibility
Surface mount package (8-VSON) suitable for automated assembly
Can be used in a variety of power electronics and motor control applications
Application Areas
Industrial and automotive power electronics
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Solar inverters
General high-power switching applications
Product Lifecycle
This is a current production product from Renesas Electronics Corporation
Replacement or upgrade options may be available, but the product is not nearing discontinuation
Several Key Reasons to Choose This Product
High power and current handling capabilities
Excellent efficiency and switching performance
Wide operating temperature range for versatile applications
Compact and robust package design for reliable operation
Proven quality and safety standards for industrial and automotive use