Manufacturer Part Number
RJK0851DPB-00#J5
Manufacturer
Renesas Electronics Corporation
Introduction
This is a high-performance N-channel MOSFET transistor from Renesas Electronics Corporation.
Product Features and Performance
80V Drain-to-Source Voltage (Vdss)
20A Continuous Drain Current (Id) at 25°C
23mΩ On-Resistance (Rds(on)) at 10A, 10V
2050pF Input Capacitance (Ciss) at 10V
45W Power Dissipation (Tc)
Operates up to 150°C Junction Temperature (Tj)
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact surface-mount package
Suitable for high-temperature applications
Key Technical Parameters
Vdss: 80V
Vgs(max): ±20V
Rds(on)(max): 23mΩ @ 10A, 10V
Id(max): 20A @ 25°C
Ciss(max): 2050pF @ 10V
Power Dissipation: 45W (Tc)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
LFPAK surface-mount package
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and power conversion applications.
Application Areas
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Renesas.
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power switching
Compact surface-mount package for space-constrained designs
Wide operating temperature range up to 150°C
RoHS3 compliance for use in environmentally-friendly applications
Reliable performance backed by Renesas' reputation as a leading semiconductor manufacturer
