Manufacturer Part Number
RJK0652DPB-00#J5
Manufacturer
Renesas Electronics Corporation
Introduction
High-performance N-channel MOSFET transistor suitable for power management and control applications.
Product Features and Performance
60V drain-to-source voltage
7mOhm maximum on-resistance at 10V gate-to-source voltage
35A continuous drain current at 25°C
4,100pF maximum input capacitance at 10V drain-to-source voltage
55W maximum power dissipation at Tc = 25°C
Product Advantages
Excellent power handling and efficiency
Low on-resistance for improved energy savings
High current capability for demanding applications
Compact surface-mount packaging
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs max): ±20V
On-resistance (Rds(on) max): 7mOhm
Continuous drain current (Id): 35A
Input capacitance (Ciss max): 4,100pF
Power dissipation (Pd max): 55W
Quality and Safety Features
RoHS3 compliant
LFPAK surface-mount package
Compatibility
Compatible with power management and control applications
Application Areas
Power supplies
Motor drives
Industrial automation
Telecommunications equipment
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade parts available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for improved energy savings
High current capability for demanding applications
Compact surface-mount packaging
RoHS3 compliant for environmental compliance
