Manufacturer Part Number
RJK0332DPB-01#J0
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a single N-Channel MOSFET transistor from Renesas Electronics Corporation, part of their RJK0332 series.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
N-Channel type
Low on-resistance of 4.7 mOhm @ 17.5 A, 10 V
High continuous drain current of 35 A at 25°C
Wide operating temperature range up to 150°C
Low input capacitance of 2180 pF @ 10 V
High power dissipation of 45 W at Tc
Product Advantages
Excellent power efficiency due to low on-resistance
Capable of handling high current loads
Wide temperature range suitable for demanding applications
Small footprint in LFPAK package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate to Source Voltage (Vgs Max): ±20 V
On-Resistance (Rds On Max): 4.7 mOhm @ 17.5 A, 10 V
Continuous Drain Current (Id): 35 A at 25°C
Input Capacitance (Ciss Max): 2180 pF @ 10 V
Power Dissipation (Max): 45 W at Tc
Quality and Safety Features
RoHS3 compliant
LFPAK package for surface mount
Compatibility
Surface mount compatible
Application Areas
Power management circuits
Motor control
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in production and available. There are no indications of it being near discontinuation at this time.
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
High current handling capability
Wide temperature range suitability
Small footprint LFPAK package
RoHS3 compliance for environmental safety
