Manufacturer Part Number
RJK0330DPB-01#J0
Manufacturer
Renesas Electronics Corporation
Introduction
This product is a discrete semiconductor device, specifically a single N-channel MOSFET transistor.
Product Features and Performance
N-channel MOSFET transistor
Operates at high temperatures up to 150°C
Low on-resistance (Rds(on)) of 2.7 mΩ at 22.5 A, 10 V
High continuous drain current of 45 A at 25°C
Low input capacitance of 4300 pF at 10 V
Product Advantages
Efficient power handling and low power loss
Suitable for high-current applications
Compact surface-mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30 V
Gate-to-source voltage (Vgs): ±20 V
Power dissipation: 55 W at Tc
Gate charge (Qg): 27 nC at 4.5 V
Quality and Safety Features
RoHS3 compliant
LFPAK surface-mount package
Compatibility
This MOSFET is a surface-mount device compatible with standard SMT assembly processes.
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High-performance N-channel MOSFET with low on-resistance and high current capability
Compact surface-mount package for efficient board space utilization
Suitable for a wide range of high-power, high-current applications
Reliable and RoHS-compliant design
