RBN75H65T1FPQ-A0#CB0 - Renesas Electronics America Inc

Manufacturer Part Number

RBN75H65T1FPQ-A0#CB0

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance Trench IGBT for industrial applications

Product Features and Performance

Trench IGBT technology for improved efficiency and switching performance

650V voltage rating and 150A current rating

Low Vce(on) of 2V @ 15V, 75A for reduced conduction losses

Fast switching with 72ns reverse recovery time

Low gate charge of 54nC for efficient driving

Operating temperature up to 175°C

Product Advantages

Improved efficiency and reduced power losses

Enables compact and high-density power conversion designs

Suitable for a wide range of industrial applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 150A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A

Reverse Recovery Time (trr): 72ns

Gate Charge: 54nC

Switching Energy: 1.6mJ (on), 1mJ (off)

Td (on/off) @ 25°C: 29ns/113ns

Quality and Safety Features

ROHS3 compliant

Industrial-grade quality and reliability

Compatibility

TO-247-3 package

Compatible with standard IGBT gate driver circuits

Application Areas

Industrial motor drives

Welding equipment

Uninterruptible power supplies (UPS)

Renewable energy systems

Induction heating

Power inverters and converters

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation or major upgrades in the near future

Several Key Reasons to Choose This Product

Excellent efficiency and switching performance

Robust design for industrial applications

Wide operating temperature range up to 175°C

Compact and high-density power conversion capabilities

Proven reliability and quality