Manufacturer Part Number
R1LP5256ESP-7SI#B0
Manufacturer
Renesas Electronics Corporation
Introduction
256Kbit Parallel SRAM with 70ns Access Time
Product Features and Performance
256Kbit Volatile SRAM Memory
Parallel Memory Interface
70ns Access Time
70ns Write Cycle Time (Word, Page)
32K x 8 Memory Organization
5V ~ 5.5V Supply Voltage
Product Advantages
ROHS3 Compliant
Surface Mount Package (28-SOIC)
Wide Operating Temperature Range (-40°C ~ 85°C)
Key Technical Parameters
Memory Type: Volatile SRAM
Memory Size: 256Kbit
Memory Interface: Parallel
Access Time: 70ns
Write Cycle Time: 70ns
Memory Organization: 32K x 8
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for a wide range of electronic applications requiring high-speed, volatile SRAM memory
Application Areas
Embedded Systems
Industrial Controls
Consumer Electronics
Telecommunications Equipment
Product Lifecycle
Currently in production
Replacements and upgrades available from Renesas Electronics
Several Key Reasons to Choose This Product
High-speed 70ns SRAM with parallel interface
Compact 28-SOIC surface mount package
Wide operating temperature range (-40°C ~ 85°C)
ROHS3 compliant for environmental sustainability
Reliable and long-lasting performance from a leading semiconductor manufacturer