Manufacturer Part Number
R1LV0108ESF-5SI#S0
Manufacturer
renesas-electronics-america
Introduction
The R1LV0108ESF-5SI#S0 is a 1Mbit SRAM memory device from Renesas Electronics America. It features a parallel memory interface and operates at 2.7V to 3.6V, making it suitable for a wide range of applications.
Product Features and Performance
1Mbit SRAM memory
128K x 8 memory organization
Parallel memory interface
55ns write cycle time (word, page)
55ns access time
Operates at 2.7V to 3.6V
Operating temperature range of -40°C to 85°C
Product Advantages
High-density SRAM memory
Fast access and write speeds
Wide operating voltage range
Extended temperature range support
Key Reasons to Choose This Product
Reliable and robust SRAM solution from a trusted manufacturer
Suitable for a variety of applications that require high-density, fast-access memory
Flexible operating conditions enable use in diverse system designs
Proven performance and quality from Renesas Electronics America
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry safety standards
Compatibility
The R1LV0108ESF-5SI#S0 is compatible with a wide range of electronic systems and devices that require high-density SRAM memory.
Application Areas
Embedded systems
Industrial automation
Telecommunications equipment
Consumer electronics
Medical devices
Product Lifecycle
The R1LV0108ESF-5SI#S0 is currently an obsolete product. Customers are advised to contact our website's sales team for information on available equivalent or alternative models.