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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~NP100P06PDG-E1-AY~~

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NP100P06PDG-E1-AY - Renesas Electronics America Inc

Manufacturer Part Number: NP100P06PDG-E1-AY

Manufacturer: Renesas Electronics Corporation

Allelco Part Number: 32D-NP100P06PDG-E1-AY

ECAD Model

Parts Description: MOSFET P-CH 60V 100A TO263

Detailed Description

Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Data sheet: ~~NP100P06PDG-E1-AY.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 12704

Specifications

NP100P06PDG-E1-AY Tech Specifications
Renesas Electronics America Inc - NP100P06PDG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America Inc - NP100P06PDG-E1-AY

Product Attribute	Attribute Value
Manufacturer	Renesas Electronics Corporation
Vgs(th) (Max) @ Id	2.5V @ 1mA
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	TO-263
Series	-
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
FET Type	P-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Base Product Number	NP100P06

Parts Introduction

Manufacturer Part Number

NP100P06PDG-E1-AY

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance P-channel MOSFET device for power management and control applications

Product Features and Performance

60V drain-source voltage (Vdss)

100A continuous drain current (Id) at 25°C

6mΩ maximum on-resistance (Rds(on)) at 50A, 10V

15,000pF maximum input capacitance (Ciss) at 10V

8W maximum power dissipation at 25°C

200W maximum power dissipation at 25°C case temperature

Product Advantages

Robust performance in high-current power applications

Efficient power conversion due to low on-resistance

Compact surface-mount package

Key Technical Parameters

MOSFET technology

P-channel FET type

TO-263 package

Quality and Safety Features

RoHS3 compliant

Operating temperature up to 175°C

Compatibility

Compatible with a wide range of power management and control circuits

Application Areas

Power supplies

Motors and drives

Industrial automation

Renewable energy systems

Product Lifecycle

This product is an active, in-production part

Replacement or upgrade options may be available from Renesas

Key Reasons to Choose This Product

Excellent power handling capability with high current rating

Efficient power conversion due to low on-resistance

Compact and thermally-efficient package

Robust operation at high temperatures

RoHS3 compliance for use in a variety of applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Renesas Electronics America Inc NP100P06PDG-E1-AY

Product Attribute
Part Number	NP100P06PDG-E1-AY	NP100P04PDG-E1-AY	NP100N04PUK-E1-AY	NP109N04PUK-E1-AY
Manufacturer	Renesas Electronics America Inc	Renesas Electronics America Inc	Renesas Electronics America Inc	Renesas Electronics America Inc
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V	3.5mOhm @ 50A, 10V	2.3mOhm @ 50A, 10V	1.75mOhm @ 55A, 10V
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Base Product Number	NP100P06	NP100P04	NP100N04	NP109N04
Vgs (Max)	±20V	±20V	±20V	±20V
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V	320 nC @ 10 V	120 nC @ 10 V	189 nC @ 10 V
Series	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V	10V	10V
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FET Feature	-	-	-	-
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Reel (TR)
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)	1.8W (Ta), 200W (Tc)	1.8W (Ta), 176W (Tc)	1.8W (Ta), 250W (Tc)
Supplier Device Package	TO-263	TO-263	TO-263	TO-263 (D²Pak)
Drain to Source Voltage (Vdss)	60 V	40 V	40 V	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)	100A (Tc)	100A (Tc)	110A (Tc)
Operating Temperature	175°C (TJ)	175°C (TJ)	175°C (TJ)	175°C (TJ)
FET Type	P-Channel	P-Channel	N-Channel	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 10 V	15100 pF @ 10 V	7050 pF @ 25 V	10800 pF @ 25 V
Vgs(th) (Max) @ Id	2.5V @ 1mA	2.5V @ 1mA	-	4V @ 250µA
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)

NP100P06PDG-E1-AY Datasheet PDF

Download NP100P06PDG-E1-AY pdf datasheets and Renesas Electronics America Inc documentation for NP100P06PDG-E1-AY - Renesas Electronics America Inc.

PCN Packaging: Label Change-All Devices 01/Dec/2022.pdf

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America	United States	5
America	Brazil	7
Europe	Germany	5
	United Kingdom	4
	Italy	5
Oceania	Australia	6
Oceania	New Zealand	5
Asia	India	4
Asia	Japan	4
Middle East	Israel	6

DHL & FedEx Shipment Charges Reference
Shipment charges(KG)	Reference DHL(USD$)
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1.00kg-2.00kg	USD$40.00 - USD$80.00
2.00kg-3.00kg	USD$50.00 - USD$100.00

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