NP100P06PDG-E1-AY - Renesas Electronics America Inc

Manufacturer Part Number

NP100P06PDG-E1-AY

Manufacturer

Renesas Electronics Corporation

Introduction

High-performance P-channel MOSFET device for power management and control applications

Product Features and Performance

60V drain-source voltage (Vdss)

100A continuous drain current (Id) at 25°C

6mΩ maximum on-resistance (Rds(on)) at 50A, 10V

15,000pF maximum input capacitance (Ciss) at 10V

8W maximum power dissipation at 25°C

200W maximum power dissipation at 25°C case temperature

Product Advantages

Robust performance in high-current power applications

Efficient power conversion due to low on-resistance

Compact surface-mount package

Key Technical Parameters

MOSFET technology

P-channel FET type

TO-263 package

Quality and Safety Features

RoHS3 compliant

Operating temperature up to 175°C

Compatibility

Compatible with a wide range of power management and control circuits

Application Areas

Power supplies

Motors and drives

Industrial automation

Renewable energy systems

Product Lifecycle

This product is an active, in-production part

Replacement or upgrade options may be available from Renesas

Key Reasons to Choose This Product

Excellent power handling capability with high current rating

Efficient power conversion due to low on-resistance

Compact and thermally-efficient package

Robust operation at high temperatures

RoHS3 compliance for use in a variety of applications