Manufacturer Part Number
NP100P04PDG-E1-AY
Manufacturer
Renesas Electronics Corporation
Introduction
The NP100P04PDG-E1-AY is a high-performance P-channel MOSFET transistor from Renesas Electronics Corporation, designed for a wide range of power management applications.
Product Features and Performance
40V drain-to-source voltage (Vdss)
100A continuous drain current (Id) at 25°C
5mΩ maximum on-resistance (Rds(on)) at 50A, 10V
15,100pF maximum input capacitance (Ciss) at 10V
8W power dissipation at 25°C (Ta), 200W at case temperature (Tc)
Supports up to ±20V gate-to-source voltage (Vgs)
5V maximum gate threshold voltage (Vgs(th)) at 1mA
320nC maximum gate charge (Qg) at 10V
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Robust design for high-temperature operation up to 175°C
Compact TO-263 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 15,100pF @ 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Quality and Safety Features
RoHS3 compliant
TO-263 package with high thermal dissipation
Compatibility
Suitable for a wide range of power management applications, including power supplies, motor drives, and DC/DC converters.
Application Areas
Power management systems
Motor control
DC/DC converters
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available from Renesas
Several Key Reasons to Choose This Product
High current handling capability up to 100A
Extremely low on-resistance for high efficiency
Robust design for high-temperature operation
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-conscious applications
Extensive application support and compatibility from Renesas