Manufacturer Part Number
NE3515S02-T1C-A
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs RF
Product Features and Performance
RoHS3 Compliant
HFET (High Frequency Transistor) Technology
Power Output: 14dBm
Test Current: 10mA
Rated Voltage: 4V
Gain: 12.5dB
Test Voltage: 2V
Current Rating: 88mA
Frequency: 12GHz
Noise Figure: 0.3dB
Product Advantages
High-performance RF transistor
Suitable for high-frequency applications
Excellent gain and low noise characteristics
Key Technical Parameters
Package: 4-SMD, Flat Leads
Supplier Device Package: S02
Package Condition: Bulk
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for high-frequency RF applications
Application Areas
Wireless communications
Radar systems
Test and measurement equipment
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High-performance RF characteristics
Compact SMD package
RoHS compliance
Suitable for a wide range of high-frequency applications