Manufacturer Part Number
NE3512S02-T1D-A
Manufacturer
Renesas Electronics Corporation
Introduction
Discrete semiconductor product
Transistor FET, MOSFET RF
Product Features and Performance
HFET technology
Gain: 13.5dB
Frequency: 12GHz
Noise Figure: 0.35dB
Current Rating: 70mA
Voltage Rated: 4V
Test Current: 10mA
Test Voltage: 2V
Product Advantages
Compact 4-SMD, flat leads package
RoHS3 compliant
Key Technical Parameters
Technology: HFET
Current Rating: 70mA
Voltage Rating: 4V
Frequency: 12GHz
Noise Figure: 0.35dB
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for RF applications
Application Areas
RF applications
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent RF performance with high gain, low noise figure, and high frequency
Compact and space-saving package
RoHS3 compliance for environmental sustainability
