Manufacturer Part Number
ISL6615IRZ-T
Manufacturer
Renesas Electronics America
Introduction
The ISL6615 is a high-performance, highly integrated, dual N-channel MOSFET gate driver IC designed to drive both the high-side and low-side power MOSFETs in half-bridge power conversion applications. It features high-current drive capability, wide supply voltage range, and excellent timing characteristics to support high-frequency switching.
Product Features and Performance
Dual N-channel MOSFET gate driver
Wide supply voltage range of 6.8V to 13.2V
Peak source/sink current of 2.5A/4A
High-side voltage up to 36V
Fast rise/fall times of 13ns/10ns
Operating temperature range of -40°C to 125°C
Small 10-VFDFN Exposed Pad package
Product Advantages
Highly integrated solution for half-bridge power conversion
Supports high-frequency switching with fast turn-on/off times
Wide operating voltage range provides flexibility
Robust design with high-side voltage and temperature capabilities
Key Reasons to Choose This Product
Optimize your power conversion designs with the ISL6615's high-performance capabilities
Reduce component count and simplify your circuit design with the integrated dual gate driver
Rely on the proven quality and reliability of Renesas' power management solutions
Quality and Safety Features
Automotive-grade qualification for reliability in harsh environments
Over-temperature protection and under-voltage lockout for added safety
Compatibility
The ISL6615 is designed for use in a variety of half-bridge power conversion applications, including:
Switch-mode power supplies
Motor drives
DC-DC converters
Class-D audio amplifiers
Application Areas
Industrial equipment
Automotive electronics
Consumer electronics
Telecommunications infrastructure
Product Lifecycle
The ISL6615 is an active product in our website's sales team's portfolio. There are no direct replacements or alternative models available at this time. For the latest information or to discuss your specific design requirements, please contact our website's sales team.