ISL6615AIBZ-T - Renesas Electronics America Inc

Manufacturer Part Number

ISL6615AIBZ-T

Manufacturer

Renesas Electronics America

Introduction

The ISL6615AIBZ-T is a high-performance, dual-channel gate driver designed for driving high-side and low-side N-channel power MOSFET or IGBT switches in half-bridge power conversion applications. It features high-speed, low-noise gate driving capabilities with tight propagation delay matching between the two channels.

Product Features and Performance

Dual-channel gate driver with independent high-side and low-side gate drive outputs

5A source and 4A sink peak current capability

13ns rise time and 10ns fall time

Wide 6.8V to 13.2V supply voltage range

Maximum high-side bootstrap voltage of 36V

Undervoltage lockout (UVLO) and thermal shutdown protection

-40°C to 125°C operating temperature range

Product Advantages

High-speed, low-noise gate driving for improved efficiency and reduced EMI

Tight propagation delay matching between channels for better switching performance

Robust protection features for reliable operation

Wide supply voltage and temperature range for versatile applications

Key Reasons to Choose This Product

Optimized for high-performance, high-efficiency power conversion designs

Ease of use with minimal external components required

Trusted Renesas quality and reliability

Quality and Safety Features

Integrated undervoltage lockout and thermal shutdown protection

Robust package and manufacturing process for high reliability

Compatibility

The ISL6615AIBZ-T is compatible with a wide range of N-channel power MOSFET and IGBT devices in half-bridge power conversion applications.

Application Areas

Switch-mode power supplies (SMPS)

Motor drives

Inverters

Power factor correction (PFC) circuits

Industrial and consumer electronics

Product Lifecycle

The ISL6615AIBZ-T is an active product, with no known plans for discontinuation. Equivalent or alternative models may be available, so customers are advised to contact our website's sales team for the latest information.