Manufacturer Part Number
IDT71V416S10PH
Manufacturer
Renesas Electronics America
Introduction
The IDT71V416S10PH is a high-speed, 4Mbit volatile SRAM memory with a parallel interface, designed and manufactured by Renesas Electronics America.
Product Features and Performance
High-performance SRAM
Asynchronous memory type
4Mbit memory size, organized as 256K x 16
Fast access time of 10ns
Parallel memory interface for efficient reading and writing
Operates on a 3V to 3.6V supply voltage
Product Advantages
Rapid write cycle time of 10ns for high-speed operations
Supports a wide range of operating temperatures (0°C to 70°C) for various environmental conditions
Surface mount TSOP packaging facilitates compact and efficient design
Key Technical Parameters
Memory Size: 4Mbit
Organization: 256K x 16
Access Time: 10 ns
Write Cycle Time: 10ns
Voltage Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Manufactured by Renesas Electronics America, a leader in semiconductor solutions, ensuring high reliability and performance
Compatibility
Parallel interface allows integration into a broad range of applications and systems
Application Areas
Ideal for applications requiring high-speed data transfer and storage
Embedded systems
Communications equipment
Industrial control systems
Product Lifecycle
Obsolete status, indicating that the product is no longer being produced
Users may need to seek replacements or upgrades for new designs
Several Key Reasons to Choose This Product
Exceptionally fast access and write times enhance system performance
High reliability and quality from Renesas, a trusted manufacturer in the semiconductor industry
Versatile application across multiple industries due to its performance features and operating temperature range
Compact TSOP packaging enables easier integration into space-constrained designs
Despite its obsolescence, it remains an optimal choice for existing designs requiring replacement parts