Manufacturer Part Number
IDT71V416S10BEI
Manufacturer
Renesas Electronics America
Introduction
IDT71V416S10BEI is a high-speed, 4Mbit SRAM memory chip designed for fast parallel interface applications.
Product Features and Performance
Memory type: Volatile SRAM (Static Random Access Memory)
Memory format: Asynchronous SRAM
Memory size: 4Mbit
Memory organization: 256K x 16
Access time: 10 ns
Write cycle time for word, page: 10ns
48-TFBGA package enhancing compact design
Operating Temperature Range: -40°C ~ 85°C
Product Advantages
Provides high-speed data access
Suitable for high-performance computing applications
Robust operational temperature range supporting extreme environments
Key Technical Parameters
Memory Size: 4Mbit
Memory Organization: 256K x 16
Write Cycle Time: 10ns
Access Time: 10 ns
Supply Voltage: 3V ~ 3.6V
Quality and Safety Features
Operates effectively within a wide temperature range of -40°C to 85°C
Packaged in a reliable 48-CABGA (9x9) form factor
Compatibility
Compatible with applications requiring a parallel memory interface
Application Areas
High-performance computing
Advanced embedded systems
Industrial applications requiring robust memory solutions
Product Lifecycle
Product Status: Obsolete
Customers should consider procuring potential replacements or seek upgrades due to discontinuation
Several Key Reasons to Choose This Product
Ultra-fast access and write cycle times suitable for high-speed operations
Durable and reliable over a wide range of temperatures, ideal for harsh industrial applications
High memory capacity facilitating robust data management and storage in embedded systems
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