Manufacturer Part Number
IDT71024S20YI
Manufacturer
Renesas Electronics America
Introduction
High-speed 1Mbit SRAM with parallel interface
Product Features and Performance
Volatile memory technology
Asynchronous SRAM
Access time of 20 ns
Write cycle time of 20 ns
Product Advantages
Fast access and write cycle for high-speed operation
Large 1Mbit storage capacity
Reliable SRAM technology
Key Technical Parameters
Memory Size: 1Mbit
Memory Organization: 128K x 8
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5V to 5.5V
Quality and Safety Features
Operating temperature range from -40°C to 85°C
Compatibility
Parallel memory interface for easy integration
Application Areas
Used in systems requiring fast access to volatile memory
Product Lifecycle
Obsolete status
Consider alternatives for future designs
Several Key Reasons to Choose This Product
High-speed operation suitable for performance-critical applications
Suitable for harsh environments with a wide temperature range
Large memory capacity for data-intensive applications
Well-suited for legacy systems requiring asynchronous SRAM