IDT71024S20Y - Renesas Electronics America Inc

Manufacturer Part Number

IDT71024S20Y

Manufacturer

Renesas Electronics America

Introduction

The IDT71024S20Y is an asynchronous SRAM memory chip designed for high-speed memory applications.

Product Features and Performance

Asynchronous SRAM technology

Memory Size: 1Mbit

Memory Format: 128K x 8

Access Time: 20 ns

Surface Mount Mounting Type

Operating at 0°C to 70°C Temperature Range

Product Advantages

Fast Write Cycle Time of 20ns supporting quick data transactions

Parallel Memory Interface for straightforward integration

Overall design suitable for high-performance memory applications

Key Technical Parameters

Memory Type: Volatile

Technology: SRAM Asynchronous

Voltage Supply: 4.5V to 5.5V

Write Cycle Time Word, Page: 20ns

Package / Case: 32-BSOJ (0.400", 10.16mm Width)

Quality and Safety Features

The product is designed for a reliable operation within the standard industrial temperature range and within typical voltage supply limits.

Compatibility

Compatible with systems that require high-speed volatile memory with a parallel interface.

Application Areas

Embedded systems

High-speed computing systems

Communications equipment

Advanced industrial machinery

Product Lifecycle

Obsolete status

No direct replacements or upgrades indicated by the manufacturer

Several Key Reasons to Choose This Product

Fast access time allows for high-performance computing applications.

Simplified system design with parallel memory interface.

Reliable operation in typical industrial environmental and electrical conditions.

Manufactured by Renesas, a respected leader in semiconductor solutions.