HIP6603BCBZ-T - Renesas Electronics America Inc

Manufacturer Part Number

HIP6603BCBZ-T

Manufacturer

Renesas Electronics America

Introduction

The HIP6603BCBZ-T is a high-performance, high-side and low-side driver designed for driving a variety of N-channel power MOSFETs in half-bridge configurations. It provides all the necessary circuitry to drive the gate of the power MOSFETs, including charge pump and bootstrap capacitor.

Product Features and Performance

Dual N-channel MOSFET drivers in a half-bridge configuration

Operates from 10.8V to 13.2V supply voltage

Integrated bootstrap diode and charge pump

Typical rise and fall times of 20ns

Operating temperature range of 0°C to 125°C

Product Advantages

Efficient and reliable power MOSFET driving

Simplifies design with integrated bootstrap and charge pump circuitry

Compact package size for space-constrained applications

Key Reasons to Choose This Product

High-performance and reliable half-bridge MOSFET driver

Optimized for efficient power conversion and control

Ease of use with integrated support circuitry

Quality and Safety Features

Designed and manufactured to high quality standards

Protections include undervoltage lockout and thermal shutdown

Compatibility

Suitable for a wide range of power MOSFET-based power conversion and control applications

Application Areas

Switching power supplies

Motor drives

Power inverters and converters

Product Lifecycle

The HIP6603BCBZ-T is an obsolete product. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.