Manufacturer Part Number
HIP6603BCBZ
Manufacturer
renesas-electronics-america
Introduction
The HIP6603BCBZ is a dual N-channel MOSFET gate driver that operates over a wide supply voltage range of 10.8V to 13.2V. It is designed for use in half-bridge configurations, providing high-side and low-side gate drive signals to control power MOSFETs or IGBTs.
Product Features and Performance
Dual N-channel MOSFET gate driver
Wide supply voltage range of 10.8V to 13.2V
Designed for half-bridge configurations
Provides high-side and low-side gate drive signals
Fast rise and fall times of 20ns (typical)
Operating temperature range of 0°C to 125°C (TJ)
Surface mount package (8-SOIC)
Product Advantages
Wide supply voltage range for versatile applications
Efficient and reliable gate drive control
Fast switching times for improved system performance
Compact surface mount package for space-constrained designs
Key Reasons to Choose This Product
Robust and reliable half-bridge gate driver solution
Optimized for high-performance power conversion applications
Supports a wide range of power MOSFET and IGBT devices
Compact and easy to integrate into your design
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry safety standards
Compatibility
The HIP6603BCBZ is compatible with a variety of power MOSFET and IGBT devices, making it suitable for a wide range of power conversion applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial and consumer electronics
Product Lifecycle
The HIP6603BCBZ is an obsolete product, and Renesas Electronics America no longer manufactures this specific model. However, there may be equivalent or alternative gate driver solutions available from Renesas or other manufacturers. Please contact our website's sales team for more information on current and recommended products for your application.